Raith E- Beam Writer

The Combined Magnetron Sputtering and Electron Beam Deposition System is an ultra-high vacuum sputtering and evaporation system.

The e_line uses a focused electron beam to expose a thin layer of electron beam resist changing the solubility of the resist in its developer. For positive resist submerging in, the developer will remove the exposed resit. For negative resist, the unexposed resist will be removed. These structures can be samples themselves or be used as stencils for the deposition of thin film materials.  

It consists of three sources for DC and RF magnetron sputtering and a four-pocket e-beam evaporator. It has two types of substrate holders: one is with an active cooling system, while the second is with a heating stage to 800°C and an RF biasing option. Both substrate holders can handle wafers up to 4” in diameter. -5-30 kV beam energies,100um write field size, >2nm stitching error, 7.5-120um beam appatures, common to achieve 20nm feature size with 10nm gaps, 3D SEM stage for angled sample inspection, >5nm SEM resolution.