@article{Jia:2019:10.1002/aenm.201902809,
author = {Jia, D and Chen, J and Zheng, S and Phuyal, D and Yu, M and Tian, L and Liu, J and Karis, O and Rensmo, H and Johansson, EMJ and Zhang, X},
doi = {10.1002/aenm.201902809},
journal = {Advanced Energy Materials},
title = {Highly Stabilized Quantum Dot Ink for Efficient Infrared Light Absorbing Solar Cells},
url = {http://dx.doi.org/10.1002/aenm.201902809},
volume = {9},
year = {2019}
}
TY - JOUR
AB - <jats:title>Abstract</jats:title><jats:p>Liquidstate ligand exchange provides an efficient approach to passivate a quantum dot (QD) surface with small binding species and achieve a QD ink toward scalable QD solar cell (QDSC) production. Herein, experimental studies and theoretical simulations are combined to establish the physical principles of QD surface properties induced charge carrier recombination and collection in QDSCs. Ammonium iodide (AI) is used to thoroughly replace the native oleic acid ligand on the PbS QD surface forming a concentrated QD ink, which has high stability of more than 30 d. The ink can be directly applied for the preparation of a thick QD solid film using a single deposition step method and the QD solid film shows better characteristics compared with that of the film prepared with the traditional PbX<jats:sub>2</jats:sub> (X = I or Br) posttreated QD ink. Infrared lightabsorbing QDSC devices are fabricated using the PbSAI QD ink and the devices give a higher photovoltaic performance compared with the devices fabricated with the traditional PbSPbX<jats:sub>2</jats:sub> QD ink. The improved photovoltaic performance in PbSAIbased QDSC is attributed to diminished charge carrier recombination induced by the subbandgap traps in QDs. A theoretical simulation is carried out to atomically link the relationship of QDSC device function with the QD surface properties.</jats:p>
AU - Jia,D
AU - Chen,J
AU - Zheng,S
AU - Phuyal,D
AU - Yu,M
AU - Tian,L
AU - Liu,J
AU - Karis,O
AU - Rensmo,H
AU - Johansson,EMJ
AU - Zhang,X
DO - 10.1002/aenm.201902809
PY - 2019///
SN - 1614-6832
TI - Highly Stabilized Quantum Dot Ink for Efficient Infrared Light Absorbing Solar Cells
T2 - Advanced Energy Materials
UR - http://dx.doi.org/10.1002/aenm.201902809
UR - https://doi.org/10.1002/aenm.201902809
VL - 9
ER -